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| DISCRETE SEMICONDUCTORS DATA SHEET handbook, 2 columns M3D118 BYV4100 Fast soft-recovery controlled avalanche rectifier Product specification 1996 Oct 07 Philips Semiconductors Product specification Fast soft-recovery controlled avalanche rectifier FEATURES * Glass passivated * High maximum operating temperature * Low leakage current * Excellent stability * Guaranteed avalanche energy absorption capability * Available in ammo-pack * Also available with preformed leads for easy insertion. DESCRIPTION Rugged glass SOD64 package, using a high temperature alloyed construction. BYV4100 This package is hermetically sealed and fatigue free as coefficients of expansion of all used parts are matched. 2/3 page k (Datasheet) LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VRRM VR IF(AV) PARAMETER repetitive peak reverse voltage continuous reverse voltage average forward current , a MAM104 Fig.1 Simplified outline (SOD64) and symbol. CONDITIONS MIN. - - MAX. 100 100 4.0 V V A UNIT Ttp = 65 C; lead length = 10 mm; averaged over any 20 ms period; see Fig.2; see also Fig.4 Tamb = 60 C; PCB mounting (see Fig.12); averaged over any 20 ms period; see Fig.3; see also Fig.4 - - 1.9 A IFRM IFSM repetitive peak forward current non-repetitive peak forward current Ttp = 65 C; see Fig.6 Tamb = 60 C; see Fig.7 t = 10 ms half sine wave; Tj = Tj max prior to surge; VR = VRRMmax L = 120 mH; Tj = Tj max prior to surge; inductive load switched off - - - 34 17 90 A A A ERSM Tstg Tj non-repetitive peak reverse avalanche energy storage temperature junction temperature - -65 -65 20 +175 +175 mJ C C 1996 Oct 07 2 Philips Semiconductors Product specification Fast soft-recovery controlled avalanche rectifier ELECTRICAL CHARACTERISTICS Tj = 25 C unless otherwise specified. SYMBOL VF V(BR)R IR PARAMETER forward voltage reverse avalanche breakdown voltage reverse current CONDITIONS IF = 3.5 A; Tj = Tj max; see Fig.5 IF = 3.5 A; see Fig.5 IR = 0.1 mA VR = VRRMmax; see Fig.8 VR = VRRMmax; Tj = 165 C; see Fig.8 trr reverse recovery time when switched from IF = 0.5 A to IR = 1 A; measured at IR = 0.25 A; see Fig.10 f = 1 MHz; VR = 0 V; see Fig.9 when switched from IF = 1 A to VR 30 V and dIF/dt = -1 A/s; see Fig.11 MIN. - - 120 - - - TYP. - - - - - - BYV4100 MAX. 0.78 0.98 - 5 150 15 V V V UNIT A A ns Cd dI R -------dt diode capacitance maximum slope of reverse recovery current - - 245 - - 2 pF A/s THERMAL CHARACTERISTICS SYMBOL Rth j-tp Rth j-a Note 1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer 40 m, see Fig.12. For more information please refer to the "General Part of associated Handbook". PARAMETER thermal resistance from junction to tie-point thermal resistance from junction to ambient note 1 CONDITIONS lead length = 10 mm VALUE 25 75 UNIT K/W K/W 1996 Oct 07 3 Philips Semiconductors Product specification Fast soft-recovery controlled avalanche rectifier GRAPHICAL DATA MGD747 BYV4100 handbook, halfpage 5 IF(AV) (A) 4 handbook, halfpage 3 MGD748 IF(AV) (A) 2 3 2 1 1 0 0 100 Ttp (C) 200 0 0 100 Tamb (C) 200 Switched mode application. a = 1.42; = 0.5; VR = VRRMmax. Switched mode application. a = 1.42; = 0.5; VR = VRRMmax. Device mounted as shown in Fig.12. Fig.2 Maximum permissible average forward current as a function of tie-point temperature (including losses due to reverse leakage). Fig.3 Maximum permissible average forward current as a function of ambient temperature (including losses due to reverse leakage). handbook, halfpage 6 P (W) 5 MGD749 handbook, halfpage 10 MGD750 a=3 2.5 2 1.57 IF (A) 8 4 1.42 3 4 2 2 6 1 0 0 2 IF(AV) (A) 4 0 0 1 VF (V) 2 a = IF(RMS)/IF(AV); = 0.5; VR = VRRMmax. Fig.4 Maximum steady state power dissipation (forward plus leakage current losses, excluding switching losses) as a function of average forward current. Dotted line: Tj = 175 C. Solid line: Tj = 25 C. Fig.5 Maximum forward voltage as a function of forward current. 1996 Oct 07 4 Philips Semiconductors Product specification Fast soft-recovery controlled avalanche rectifier BYV4100 handbook, full pagewidth 40 MGD751 IFRM (A) 30 = 0.05 0.1 20 0.2 10 0.5 1 0 10-2 10-1 1 10 102 103 tp (ms) 104 Ttp = 65 C; Rth j-tp = 25 K/W; VR = VRRMmax during 1 - . Fig.6 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor. handbook, full pagewidth 20 MGD752 IFRM (A) = 0.05 15 0.1 10 0.2 5 0.5 1 0 10-2 10-1 1 10 102 103 tp (ms) 104 Tamb = 60 C; Rth j-a = 75 K/W; VR = VRRMmax during 1 - . Fig.7 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor. 1996 Oct 07 5 Philips Semiconductors Product specification Fast soft-recovery controlled avalanche rectifier BYV4100 103 handbook, halfpage IR (A) 102 MGC550 103 handbook, halfpage Cd (pF) MGD753 102 10 1 0 100 Tj (C) 200 10 1 10 VR (V) 102 VR = VRRMmax. f = 1 MHz; Tj = 25 C. Fig.8 Reverse current as a function of junction temperature; maximum values. Fig.9 Diode capacitance as a function of reverse voltage; typical values. handbook, full pagewidth DUT IF (A) 0.5 t rr 0.5 A 50 0 0.25 0.5 IR (A) 1.0 t MAM282 Rise time oscilloscope: tr 2 ns. Turn-on time switch: t 3 ns. Fig.10 Test circuit and reverse recovery time waveform and definition. 1996 Oct 07 6 Philips Semiconductors Product specification Fast soft-recovery controlled avalanche rectifier BYV4100 handbook, halfpage 50 25 IF andbook, halfpage dI F dt t rr 10% t dI R dt 100% IR MGC499 7 50 2 3 MGA200 Dimensions in mm. Fig.11 Reverse recovery definitions. Fig.12 Device mounted on a printed-circuit board. 1996 Oct 07 7 Philips Semiconductors Product specification Fast soft-recovery controlled avalanche rectifier PACKAGE OUTLINE BYV4100 handbook, full pagewidth k 4.5 max 28 min Dimensions in mm. The marking band indicates the cathode. , 5.0 max a 1.35 max 28 min MBC049 Fig.13 SOD64. DEFINITIONS Data sheet status Objective specification Preliminary specification Product specification Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications. 1996 Oct 07 8 |
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